Measuring doping profiles of silicon detectors with a custom-designed probe station

W. Treberspurg; T. Bergauer; M. Dragicevic; J. Hrubec; M. Krammer; M. Valentan

doi:10.1088/1748-0221/7/11/P11009

Measuring doping profiles of silicon detectors with a custom-designed probe station

W. Treberspurg, T. Bergauer, M. Dragicevic, J. Hrubec, M. Krammer, M. Valentan

Austrian Academy of Sciences

Publikation: Beitrag in Fachzeitschrift › Artikel › peer-review

11 Zitate (Scopus)

Originalsprache	Englisch
Aufsatznummer	P11009
Seiten (von - bis)	P11009
Fachzeitschrift	Journal of Instrumentation
Jahrgang	7
Ausgabenummer	11
DOIs	https://doi.org/10.1088/1748-0221/7/11/P11009
Publikationsstatus	Veröffentlicht - 1 Nov. 2012
Extern publiziert	Ja

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10.1088/1748-0221/7/11/P11009

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title = "Measuring doping profiles of silicon detectors with a custom-designed probe station",

keywords = "Manufacturing, Radiation damage to detector materials (solid state), Si microstrip and pad detectors",

author = "W. Treberspurg and T. Bergauer and M. Dragicevic and J. Hrubec and M. Krammer and M. Valentan",

year = "2012",

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AU - Krammer, M.

AU - Valentan, M.

PY - 2012/11/1

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Measuring doping profiles of silicon detectors with a custom-designed probe station

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