Backside doping profiles of irradiated silicon detectors

W. Treberspurg; T. Bergauer; M. Dragicevic; M. Krammer; M. Valentan

doi:10.1088/1748-0221/8/04/P04019

Backside doping profiles of irradiated silicon detectors

W. Treberspurg, T. Bergauer, M. Dragicevic, M. Krammer, M. Valentan

Fakultät Technik

Publikation: Beitrag in Fachzeitschrift › Artikel › peer-review

2 Zitate (Scopus)

Originalsprache	Englisch
Aufsatznummer	P04019
Seiten (von - bis)	P04019
Fachzeitschrift	Journal of Instrumentation
Jahrgang	8
Ausgabenummer	4
DOIs	https://doi.org/10.1088/1748-0221/8/04/P04019
Publikationsstatus	Veröffentlicht - 1 Apr. 2013

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10.1088/1748-0221/8/04/P04019

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title = "Backside doping profiles of irradiated silicon detectors",

keywords = "Radiation damage evaluation methods, Radiation damage to detector materials (solid state), Radiationhard detectors, Si microstrip and pad detectors",

author = "W. Treberspurg and T. Bergauer and M. Dragicevic and M. Krammer and M. Valentan",

year = "2013",

month = apr,

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doi = "10.1088/1748-0221/8/04/P04019",

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AU - Treberspurg, W.

AU - Bergauer, T.

AU - Dragicevic, M.

AU - Krammer, M.

AU - Valentan, M.

PY - 2013/4/1

Y1 - 2013/4/1

KW - Radiation damage evaluation methods

KW - Radiation damage to detector materials (solid state)

KW - Radiationhard detectors

KW - Si microstrip and pad detectors

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DO - 10.1088/1748-0221/8/04/P04019

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JO - Journal of Instrumentation

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Backside doping profiles of irradiated silicon detectors

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